Irf840 Schaltplan
Irf840 features drain current id 8 0a tc 25 c drain source voltage. 2002 fairchild semiconductor corporation irf840 rev.
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Irf840 schaltplan. Philips semiconductors product specification powermos transistor irf840 avalanche energy rated features symbol quick reference data d repetitive avalanche rated fast switching vdss 500 v high thermal cycling performance low thermal resistance id 8 5 a g rds on 0 85 ω s general description pinning sot78 to220ab n channel enhancement mode pin descript. N channel enhancement mode silicon gate tmos power field effect transistor irf840 datasheet irf840 circuit irf840 data sheet. Absolute maximum ratings ta 25 c symbol vdss vgs id i dm pd tj tstg parameter.
The mosfet could switch loads that consume upto 8a it can turned on by providing a gate threshold voltage of 10v across the gate and source pin. Irf840 sihf840 absolute maximum ratings tc 25 c unless otherwise noted parameter symbol limit unit drain source voltage vds 500 v gate source voltage vgs 20 v continuous drain current vgs at 10 v tc 25 c id 8 0 tc 100 c 5 1 a pulsed drain current a idm 32 linear derating factor 1 0 w c single pulse avalanche energy b eas 510 mj. Irf840 500 v 0 85 ω 8 a symbol parameter value unit vds drain source voltage vgs 0 500 v vdgr drain gate voltage rgs 20 kω 500 v vgs gate source voltage 20 v id drain current continuos at tc 25 c 8a id drain current continuos at tc 100 c 5 1 a idm l drain current pulsed 32 a ptot total dissipation at tc 25 c 125 w.
B irf840 8a 500v 0 850 ohm n channel power mosfet this n channel enhancement mode silicon gate power field effect transistor is an advanced power mosfet designed tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. Irf840 sihf840 absolute maximum ratings tc 25 c unless otherwise noted parameter symbol limit unit drain source voltage vds 500 v gate source voltage vgs 20 v continuous drain current vgs at 10 v tc 25 c id 8 0 tc 100 c 5 1 a pulsed drain current a idm 32 linear derating factor 1 0 w c single pulse avalanche energy b eas 510 mj. The irf840 is an n channel power mosfet which can switch loads upto 500v.
Irf840 datasheet irf840 pdf irf840 data sheet irf840 manual irf840 pdf irf840 datenblatt electronics irf840 alldatasheet free datasheet datasheets data. Vdss 500v min static drain source on resistance 0 85fi max descrition designed for high voltage high speed switching power applic ations such as switching regulators converters solenoid and relay drivers.
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